Dion school papers

EXTRA-EM: extraction of temperature and resistance for acceleration of electromigration at wafer-level: A thermal model and a control algorithm are developed for rapid electromigration (EM), which extracts both temperature and resistance for acceleration (EXTRA) from a standard wafer-level electromigration acceleration test (SWEAT) test structure. SWEAT structure complexity makes determination of the temperature and resistance during the execution of....; Authors:Dion;M.J.Publisher:Reliability Physics Symposium;1991;29th Annual Proceedings.;InternationalConference Date:9-11 April 1991ISSN:0-87942-680-2Total Page:viii+367

Finite element analysis of a SWEAT structure with a 3-D, nonlinear, coupled thermal-electric model: The complexities of determining thermal characteristics within the standard wafer electromigration accelerated test (SWEAT) structure during accelerated metal integrity or electromigration tests are discussed. A 3-D, nonlinear, coupled thermal-electric finite element model is developed and was solved with the ANSYS program to investigate heat flow ....; Authors:Dion;M.J.Publisher:Reliability Physics Symposium 1992. 30th Annual Proceedings.;InternationalConference Date:31 March-2 April 1992ISSN:0-7803-0473-XTotal Page:x+404

Finite element analysis of a SWEAT structure with a 3-D, nonlinear, coupled thermal-electric model: The standard wafer electromigration accelerated test (SWEAT) structure for metal integrity or highly accelerated electromigration (EM) testing has complexities that make determination of thermal characteristics difficult. Steady-state SWEAT structure thermal-electric characteristics as might exist for the first several seconds of a test, i.e., with....; Authors:Dion;M.J.Publisher:Microelectronic Test Structures;1992. ICMTS 1992. Proceedings of the 1992 International Conference onConference Date:16-19 March 1992ISSN:0-7803-0535-3Total Page:xi+214

Building in reliability (BIR) with critical nodes: Advances in technology have enabled the semiconductor industry to reduce reliability failure rates. However, the cost to continue the past methods of understanding reliability performance of these advanced technologies is increasing rapidly. While it is increasingly difficult to measure the reducing reliability failure rates, the philosophy of cont....; Authors:Dion;M.Publisher:Integrated Reliability Workshop;1995. Final Report.;InternationalConference Date:22-25 Oct. 1995ISSN:0-7803-2705-5Total Page:vi+172

Standardization of wafer level reliability techniques-JEDEC 14.2: Summary form only given. JEDEC stands for: Joint Electronic Device Engineering Council and is sometimes known as simply "The Council", and is the engineering standardization body ofthe Electronic Industry Association (EIA). Promoting development and standardization of test methods, nomenclature and product characterization are primary functions of ....; Authors:Dion;M.J.Publisher:Integrated Reliability Workshop;1994. Final Report.;1994 InternationalConference Date:16-19 Oct. 1994ISSN:0-7803-1908-7Total Page:v+155

Electromigration lifetime enhancement for lines with multiple branches: With clock or power supply interconnect "trees" there is often a very high current "trunk" feeding current to multiple branches. This work demonstrates and discusses increased "trunk" lifetime with increasing numbers of current branches in a plug-via metal system. The branches act as reservoirs or sources of additional Al and Cu ions, which can re-....; Authors:Dion;M.J.Publisher:Reliability Physics Symposium;2000. Proceedings. 38th Annual 2000 IEEE InternationalConference Date:10-13 April 2000ISSN:0-7803-5860-0Total Page:viii+456

Standardizing EM structures for evaluation and qualification of aluminum alloys with barrier metals: Barrier metal interconnects are the most used metal systems in the semiconductor industry. Barrier metal electromigration (EM) performance and characteristics are significantly different than "old" aluminum alloy systems, and different EM structures are needed to properly evaluate the EM performance. A proposed EM structure for barrier metal reliab....; Authors:Dion;M.J.Publisher:Integrated Reliability Workshop Final Report;2000 IEEE InternationalConference Date:23-26 Oct. 2000ISSN:0-7803-6392-2Total Page:vii+199

Reservoir modeling for electromigration improvement of metal systems with refractory barriers: Metal ion reservoirs in a Ti-AlCu-TiN metal system with W vias have been shown to increase electromigration lifetimes in barrier metal systems. In this study, it is empirically shown that EM lifetime increase is related to the natural-log of reservoir length in a constant width line. In this process, where vias do not penetrate the barrier, the num....; Authors:Dion;M.J.Publisher:Reliability Physics Symposium;2001. Proceedings. 39th Annual. 2001 IEEE InternationalConference Date:30 April-3 May 2001ISSN:0-7803-6587-9Total Page:x+464

Discussion group summary: "The decline and fall of semiconductor reliability": Authors:Dion;M.Publisher:Integrated Reliability Workshop Final Report;2003 IEEE InternationalConference Date:20-23 Oct. 2003ISSN:0-7803-8157-2Total Page:viii+182

Elements of a process-improvement program (software quality): Increased competition is forcing more software organizations to improve their processes. Along with pressure for improvement comes a demand for a cost-benefit analysis of the investment. A process-improvement program which Raytheon put in place is described. The results of a quantitative analysis involving six major projects over three years are pr....; Authors:Dion;R.Publisher:Software;IEEEConference Date:ISSN:0740-7459Total Page:

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