- Optimization of a sigma-delta modulator by the use of a slow ADC
- A 1-bit sigma-delta modulator with a loop delay t/sub dl/ (conversion time of the analog-to-digital converter, or ADC) is considered. Its idle channel pattern, which is calculated by using the modified z-transform, is influenced by the loop delay time. An optimization of this delay time yields a minimized signal power at the input of the quantizer ....
- Authors:Gosslau;A.;Gottwald;A.Publisher:Circuits and Systems;1988.;IEEE International Symposium onConference Date:7-9 June 1988ISSN:Total Page:3 vol. 2915
- Development in silicon sheet technologies
- The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each....
- Authors:Goetzberger;A.;Rauber;A.Publisher:Photovoltaic Specialists Conference;1988.;Conference Record of the Twentieth IEEEConference Date:26-30 Sept. 1988ISSN:Total Page:2 vol. 1664
- Signal evaluation and measurement techniques in a single cell hybrid tactile sensor for large object manipulation
- It is noted that tactile sensors based on piezoelectric active surfaces require complex and advanced analog and digital signal processing circuitry in order to provide the best evaluation of the information resulting from the mechanical action of the manipulated object. Following a complete analysis of the hybrid structure and functionality of two ....
- Authors:Brandolini;A.;Gandelli;A.Publisher:Instrumentation and Measurement Technology Conference;1990. IMTC-90. Conference Record.;7th IEEEConference Date:13-15 Feb. 1990ISSN:Total Page:xix+396
- Reliability prediction model for gyroscopes
- An example is presented of reliability-prediction analysis of displacement gyros and rate gyros based on a detailed failure-mode analysis. Performance reliability and technical reliability are dealt with using different models for each to determine the reliability of the entire instrument. Miner's rule and reduced energy and statistical safety-fact....
- Authors:Dumai;A.;Winkler;A.Publisher:Reliability and Maintainability Symposium;1990. Proceedings.;AnnualConference Date:23-25 Jan. 1990ISSN:Total Page:xx+534
- Volume and density measurements for the IMGC Avogadro experiment
- Volume and density measurement efforts at the IMGC made in the framework of the Avogadro constant experiment are reviewed, and a critical analysis of the problems encountered is presented. The status of efforts directed at the determination of the molar volume of silicon is examined, with emphasis on the development and application of a new, more p....
- Authors:Peuto;A.;Sacconi;A.Publisher:Precision Electromagnetic Measurements;1990. CPEM '90 Digest.;Conference onConference Date:11-14 June 1990ISSN:Total Page:xxiv+446
- High-precision analog-to-digital converter testing using Walsh transform
- The authors present the theoretical basis underlying an innovative and unified set of parameters based on Walsh functions for testing the transfer function of analog-to-digital converters. The system presented is an enhanced version of an earlier system introduced by A. Brandolini (IEEE Instrum./Meas. Technol. Conference, 1988, San Diego, CA, USA) ....
- Authors:Brandolini;A.;Gandelli;A.Publisher:Precision Electromagnetic Measurements;1990. CPEM '90 Digest.;Conference onConference Date:11-14 June 1990ISSN:Total Page:xxiv+446
- Parallel media access controller for packet communications at Gb/s rates
- A modular design for parallel multiple access control of packet switched networks operating at gigabit-per-second rates is described. The speed limitation of the electronic components due to the serial processing of the media access protocol has been circumvented by transparent fragmentation and by parallel transmission and processing of the fragme....
- Authors:Ippoliti;A.;Albanese;A.Publisher:Communications;1990. ICC '90;Including Supercomm Technical Sessions. SUPERCOMM/ICC '90. Conference Record.;IEEE International Conference onConference Date:16-19 April 1990ISSN:Total Page:4 vol. xxx+1759
- Superlattice contact layers for high open circuit voltage a-Si:H solar cells
- The maximum theoretical open-circuit voltage of a solar cell is set by its built-in voltage. For amorphous silicon p-i-n cells, the positions of the Fermi levels ill the p and n-contact regions are of the order of 0.4 eV and 0.2 eV from their respective band edges, limiting the built-in voltage to 0.6 eV. The authors propose replacing the p- and n-....
- Authors:Rothwarf;A.;Varonides;A.Publisher:Photovoltaic Specialists Conference;1990.;Conference Record of the Twenty First IEEEConference Date:21-25 May 1990ISSN:Total Page:2 vol. 1673
- Linearization of a sigma-delta modulator by a proper loop delay
- The influence of a loop delay on the effective transfer characteristic of the quantizer and on the linearity of a first-order sigma-delta modulator is investigated. It is shown that the idle channel noise (ICN) of a first-order sigma-delta modulator acts as a dither signal and linearizes the transfer characteristic of the 1-bit quantizer. The ICN d....
- Authors:Gosslau;A.;Gottwald;A.Publisher:Circuits and Systems;1990.;IEEE International Symposium onConference Date:1-3 May 1990ISSN:Total Page:4 vol. xxxix+3289
- Arbitrarily tight phase approximation: mathematical feasibility proof
- The phase-equalization problem for continuous-time and discrete-time linear systems is considered from a theoretical point of view. The purpose is thus not to present an efficient algorithm for solving this problem in practice, but to offer a mathematical proof that an arbitrarily tight approximation of the linear phase behavior in any given finite....
- Authors:Kummert;A.;Fettweis;A.Publisher:Circuits and Systems;1990.;IEEE International Symposium onConference Date:1-3 May 1990ISSN:Total Page:4 vol. xxxix+3289
- High-frequency modulation of a QW diode l
- Device characteristics of 0.1 /spl mu/m M
- An 8/spl times/8 array of surface emittin
- Ultra-high breakdown high-performance AlI
- Tunable internal photoemission sensor usi
- 21 psec switching 0.1 /spl mu/m-CMOS at r
- Thin CVD stacked gate dielectric for ULSI
- Species, dose and energy dependence of im
- An accurate and computationally-efficient
- A highly reliable via filling technology
- Estimation of wafer cost for technology d
- A statistical polishing pad model for che
- 3D modeling of contact material depositio
- A simulation of micro-loading phenomena i
- Profile simulation of plasma enhanced and
- One-decade reduction of pn-junction leaka
- The impact of fluorine on CMOS channel le
- A capacitorless DRAM cell on SOI substrat
- A sub-0.1-/spl mu/m grooved gate MOSFET w
- Water-related threshold voltage instabili
- Current status of the digital micromirror
- Evaluation of electromigration and stress
- Lightly N/sub 2/O nitrided dielectrics gr
- A boron-retarding and high interface qual
- A 0.5 /spl mu/m CMOS technology for multi
