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Electromagnetic simulator interfacing to a general CAD framework: automatic, electromagnetic-based mesh generation
An electromagnetic simulator has been interfaced through a custom-meshing program to a general CAD (computer-aided design) framework. Standard information within the CAD framework (netlist information, location in layout, and maximum simulation frequency) is all that is needed to automatically gener....
Authors:Draxler;P.J.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
Object-oriented design of microwave circuit simulators
The authors introduce the motion of object-oriented design in the construction of circuit analysis software through a reflection on the basic objects and object classes of circuit analysis. Simple architectures of the three fundamental families of circuit analysis objects are given. With these funda....
Authors:Carvalho;P.;Ngoya;E.;Rousset;J.;Obregon;J.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
An introduction to MHDL
The MIMIC (microwave and millimeter wave integrated circuit) Hardware Description Language (MHDL), intended for use in describing microwave and analog hardware, is discussed. The authors describe how MHDL addresses the key issues of: (1) the representation of hardware hierarchical structure and supp....
Authors:Barton;D.L.;Dunlop;D.D.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
Quarter-micron WSi/Au gate AlGaAs/InGaAs HJFETs for Q-band power applications
Quarter-micron T-shaped (WSi/plated-Au) gate AlGaAs/InGaAs HJFETs (heterojunction field effect transistors) for Q-band power applications are reported. An F/sub max/ of 170 GHz was achieved for the 100- mu m-gate-width device. F/sub max/ values of 115 and 90 GHz were realized for 400- and 800- mu m-....
Authors:Matsumura;T.;Kanamori;M.;Oikawa;Y.;Shinozaki;S.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
X-band GaInP/GaAs power heterojunction bipolar transistor
The large-signal performance of GaInP/GaAs HBTs (heterojunction bipolar transistors) at X-band is reported on. A CW (continuous wave) output power of 1.0 W is obtained from a GaInP/GaAs HBT consisting of ten 2- mu m*30- mu m emitter fingers, corresponding to a powder density of 33.3 W/mm. The associ....
Authors:Liu;W.;Khatibzadeh;A.;Henderson;T.;Fan;S.-K.;Davito;D.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
GaAs FET direct frequency-modulators for 42-GHz-band HDTV radio cameras and 7-GHz-band field pick-up transmitters
The design of a direct frequency-modulator with high modulation sensitivity is described. With a dielectric resonator, two hyper-abrupt-junction varactors, and a GaAs FET, this design achieves a modulation sensitivity greater than 20 MHz/V in a 42-GHz-band frequency modulator developed for HDTV (hig....
Authors:Mitsumoto;H.;Imai;K.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
A monolithic dielectrically stabilized voltage controlled oscillator for the millimeter wave range
The design, fabrication, and evaluation of a monolithic 29-GHz dielectrically stabilized voltage-controlled oscillator (DVO) using a MESFET as the active device are described. The novel design yields an oscillator with excellent phase noise behavior and frequency tuning capabilities. A phase noise N....
Authors:Guttich;U.;Dieudonne;J.-M.;Schmidt;L.-P.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
Research activities on millimeter wave indoor communication systems in Japan
R&D activities on millimeter-wave indoor communication systems in Japan are described. Attention is given to millimeter-wave propagation characteristics, a system study of indoor communications in offices, and the development of active devices such as MMICs (monolithic microwave integrated circuits)....
Authors:Takimoto;Y.;Ihara;T.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
Australian activities in microwave links for wireless LANs
A program centered at the CSIRO Division of Radiophysics in Australia aims to develop third-generation wireless systems with capacities on the order of 100 Mb/s in a cell. The authors discuss some of the issues relating to the design of millimeter-wave antennas and transceiver MMICs (monolithic micr....
Authors:Batechlor;R.A.;Archer;J.W.;Bird;T.S.;Giugni;S.;Kot;J.S.;Nikolic;N.;Ostry;D.I.;Percival;T.M.;Young;A.C.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
A novel MMIC power amplifier for pocket-size cellular telephones
A novel MMIC (monolithic microwave integrated circuit) power amplifier for cellular telephones is proposed. The amplifier, called UBIC-PA (unbalanced bias cascode power amplifier), makes very compact monolithic integration possible in spite of the considerably low frequency of 900 MHz. The UBIC-PA h....
Authors:Muraguchi;M.;Nakatsugawa;M.;Aikawa;M.Publisher:Microwave Symposium Digest;1993.;IEEE MTT-S InternationalConference Date:14-18 June 1993Total Page:3 vol. (iii+xlv+xlixISSN:0-7803-1209-0
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