- A simulation of plastic deformation of si
- Explanation of reverse short channel effe
- MOSFET reverse short channel effect due t
- The effects of strain on dopant diffusion
- A high-resolution study of two-dimensiona
- Embedded ground planes using sidewall ins
- Present status and future prospects for l
- High-frequency modulation of a QW diode l
- Device characteristics of 0.1 /spl mu/m M
- An 8/spl times/8 array of surface emittin
- Ultra-high breakdown high-performance AlI
- Tunable internal photoemission sensor usi
- 21 psec switching 0.1 /spl mu/m-CMOS at r
- Thin CVD stacked gate dielectric for ULSI
- Species, dose and energy dependence of im
- An accurate and computationally-efficient
- A highly reliable via filling technology
- Estimation of wafer cost for technology d
- A statistical polishing pad model for che
- 3D modeling of contact material depositio
- A simulation of micro-loading phenomena i
- Profile simulation of plasma enhanced and
- One-decade reduction of pn-junction leaka
- The impact of fluorine on CMOS channel le
- A capacitorless DRAM cell on SOI substrat
